Abstract

The C/ZnO/C heterostructure is fabricated on single silicon substrate using magnetron sputtering system. The device shows an obvious bipolar resistive switching (RS) memory behavior, which can be modulated by the white light at room temperature. The RS ratio and Set/Reset voltage can be controlled by the white light. A high RS ratio of 105 under illumination can be obtained, while the RS ratio in the dark is about 3. Not only the favorable RS ratio can be realized, but also the RS behaviors show excellent stability and endurance characteristics in C/ZnO/C memory cells. Based on the double-logarithm I-V fitting, the electrons trapping and de-trapping should result in the resistive switching behavior of C/ZnO/C memory cells.

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