Wet oxidation for optoelectronic and MIS GaAs devices

Abstract

Because the principal additional fabrication technique for opto electronic devices is the wet oxidation of buried Al-containing layers to make current apertures in VCSELs (vertical cavity surface emitting lasers), this chapter will focus on that process. Both fundamental issues and practical considerations for using a wet oxidation process are presented here. The chapter concludes with a discussion of attempts to make electronic devices, such as GaAs on-insulator (GOI) MESFETs and metal-insulator-semiconductor (MIS) devices, using wet oxidation.