Abstract
The exciton phonon interaction in AlGaAs/GaAs and InGaAs/GaAs single quantum wells (QWs) is studied through the temperature dependence of the oscillator strength of the zero-phonon-line e1-hh1 excitonic transition. It is found that the main phonon modes involved in the exciton phonon interaction are different between these two systems: the confined phonons in the AlGaAs/GaAs QWs and the three-dimensional phonons in the InGaAs/GaAs QWs.
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