Well-defined electrical properties of high-strain resonant interband tunneling structure

Abstract

The GaAs/InAs high-strain resonant interband tunneling diodes (HSRITDs) have been implemented by metal organic chemical vapor deposition (MOCVD). The current–voltage characteristics of variable quantum well and barrier thickness grown on (1 1 1) GaAs substrates are investigated. Experimental results reveal that the quantum barrier and well layer will influence current–voltage properties such as the peak current density, valley current density, and peak-to-valley current ratio (PVCR). Both peak current and valley current density decrease with increasing layers width. This result also exhibits the variation of PVCR with layers width.