Abstract
Values of silicon resistivity calculated from spreading resistance measurements agree with values of resistivity determined from four‐point measurements over a range of dopant density from . The resistivity values from the spreading resistance measurements were determined solely using a mathematical expression based upon a simple geometrical model, without the need for a separate calibration. The measurements were made using aluminum‐silicon contacts having a well‐defined geometry. Arrays of such contacts were also used to examine local resistivity variations. Two‐contact spreading resistance measurements are shown to underestimate the amplitude of resistivity variations compared to one‐contact measurements.
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