Abstract
Small scale (∼ 50 µm) radial impurity concentration inhomogeneities in silicon wafers have been measured using both the MOS-CV method and the spreading resistance technique. The MOS-CV measurements were made using photolithographically defined 50 µm square capacitors placed on 75 µm centers and the spreading resistance measurements were made using a model 100 ASR probe on the same wafers after removal of the MOS capacitors. A direct comparison between these methods is presented for three specific types of ‹111› oriented silicon wafers with an impurity concentration range between 5 and 10 × 1014/cm3 In addition, a photograph showing the direct effect of radial resistivity variations on the dark field coring of a PICTUREPHONE® target is included.
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