Abstract
Well-aligned carbon nanotube (CNT) array grown on Si-based nanoscale SiO 2 islands was obtained by microwave plasma-enhanced chemical vapor deposition under low temperature of 520°C. Atomic force microscope observation and Raman spectroscopic analysis disclosed the formation of the CNTs. The SiO 2 islands formed by excess anodization of Si-based Al film were found to be the growth points of the CNTs, which was confirmed by the C–V curves without charge characteristics. Position-controllable growth of CNTs was attempted on silicon substrate so as to explore significant applications in nanoelectronics and nanodevices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
