Abstract
Well-aligned carbon nanotube (CNT) array grown on Si-based nanoscale SiO 2 islands was obtained by microwave plasma-enhanced chemical vapor deposition under low temperature of 520°C. Atomic force microscope observation and Raman spectroscopic analysis disclosed the formation of the CNTs. The SiO 2 islands formed by excess anodization of Si-based Al film were found to be the growth points of the CNTs, which was confirmed by the C–V curves without charge characteristics. Position-controllable growth of CNTs was attempted on silicon substrate so as to explore significant applications in nanoelectronics and nanodevices.
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