Abstract
A new approach to the Monte Carlo method for the solution of electron transport problems in semiconductors is presented and applied to some special cases of interest. The method is based on an iterative expansion of the Boltzmann equation in Chambers form and yields a simulative algorithm where the scattering events are chosen with arbitrary probabilities. In this way it is possible to analyse in great details regions of real and/or momentum space that would rarely be visited in a standard simulation. Applications are shown to the problems of high energy tails, of the surmounting of a high energy barrier, and of the low-field contact region.
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