Abstract
The reliability of ultra-thin silicon oxynitride gate dielectrics was investigated in terms of the Weibull slope of the t bd distributions, and the voltage acceleration factor. High field t BD statistics were extrapolated using a worst-case linear fit, to the low field region. The samples showed low voltage acceleration, which degrades reliability, but this is overcome by high Weibull slopes ( β), which improve reliability. The high β values were investigated by monitoring the change in β as gate current increased during CVS. We saw the Weibull slope change from ≈1 at low current to 2 at high current, indicating that breakdown results from 2-trap conduction. Charge pumping measurements showed that the trap generation rate at the SiON/Si interface, where most of the Nitrogen resides was very low. Thus it was concluded that there is a much higher trap generation rate in the bulk than at the interface and this is responsible for the values of β.
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