Abstract
The effect of thermal annealing on leakage current and dielectric breakdown in self-assembled nanodielectric (SAND) metal−insulator−semiconductor (MIS) devices is investigated. Annealing at temperatures of ≥300 °C for 120 s in a reducing atmosphere significantly reduces the leakage current density at typical operating voltages (Vg = 3 V) while greatly narrowing the distribution of breakdown voltages. The threshold breakdown voltage is characterized by a Weibull distribution of slope β ≈ 4.5 prior to thermal annealing, and by β ≥ 12 post annealing. A comparison of the breakdown characteristics of conventional inorganic dielectrics with those of SAND demonstrates that self-assembly is a viable approach to fabricating highly reliable dielectric materials for unconventional electronics.
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