Weak localization effect in pulsed laser deposited ZnO film

Abstract

Low temperature longitudinal magnetoresistance measurement in pulsed laser deposited undoped ZnO film has been investigated. The temperature and magnetic field dependence of the resistivity of the film is in good agreement with the theory of weak localization and electron-electron interactions in a disordered system. Negative magnetoresistance is a consequence of the suppression of quantum interference effect in the weak localization theory. The inelastic scattering time τi ~ T −3/2 and phase coherence length Lϕ(T) ~ T −3/4 indicates that the electron-electron interaction is the dominant inelastic scattering process.