Weak localization and hole-hole interaction effects in silicon-boron delta layers

Abstract

Measurements of sheet resistance and Hall coefficient between 0.3 K and 30 K have been used to infer two-dimensional weak localization and hole-hole interaction effects in Si:B delta-doped layers. It is found that the renormalized screening parameter in the interaction theory F* approximately 0.9 for samples of sheet concentrations 1.8*1013 cm-2 to 7.6*1013 cm-2 and is only weakly dependent on carrier concentration, in agreement with theory. The weak localization correction provides evidence for spin-orbit scattering, which appears to become increasingly important as the sheet concentration is increased.