Weak localization and charge-carrier interaction effects in a two-dimensional hole gas in a germanium quantum well in a SiGe∕Ge∕SiGe heterostructure

Abstract

The weak localization and interaction effects for charge carriers in a two-dimensional hole gas in a pure germanium quantum well in a SiGe∕Ge∕SiGe heterostructure with a hole density of 5.68×1011cm−2 and mobility of 4.68×104cm2V−1s−1 are investigated. The resistance measurements were made at temperatures from 46mKto10K and magnetic fields up to 15T. The magnetic-field dependence of the resistivity exhibits Shubnikov-de Haas oscillations and quantum Hall effect steps. At very low magnetic fields (B<0.1T) a weak localization effect for holes is revealed, which makes for a negative magnetoresistance and growth of the resistance with decreasing temperature (at T<2K). The manifestation of the interaction effect is observed and analyzed over a wide range of temperatures and magnetic fields. With increasing temperature the manifestation of the interaction-induced quantum correction passes from the diffusive regime to an intermediate and then to the ballistic regime. In all regions the behavior of the interaction quantum correction is in good agreement with the modern theoretical predictions.