Weak localization and electron–electron interaction induce resistance minimum in 2H-Ga0.20NbSe2

Abstract

Here we present the resistivity on polycrystalline compounds of 2H-GaxNbSe2 where x = 0 and 0.20 in the temperature range The 2H-NbSe2 shows the superconducting (SC) state at Ts = 7.4 K whereas 2H-Ga0.20NbSe2 shows a minimum in resistivity ‘ρmin’ at Tmin = 18 K followed by a rapid decrease in resistivity below 4 K. This resistivity minimum in 2H-Ga0.20NbSe2 has been discussed by two models namely weak localization and electron–electron interaction. Though is well fitted by law in 2H-Ga0.20NbSe2 associated with electron–electron scattering, there is also a contribution from spin–orbit scattering to the rise in resistivity below 18 K due to weak localization found from MR measurement.