Abstract
Temperature (1.6–20K) and magnetic field (up to 2.5T) dependences of quantum corrections to the conductivity and Hall coefficient ofSi epitaxial films containing a δ -layer of different sheet densityN Sb are studied. The quantum corrections are due to the effects of electron weak localization (WL) and electron-electron interaction (EEI). Analysis of the quantum corrections made it possible to determine the temperature dependence of electron phase relaxation time τϕ, the spin-orbit interaction time τ80 and the screening factorF. It is found that the dependence τϕ(T) is determined by the electron-electron scattering processes, τϕ∝T −p withp≈1, and an increase in the parameterF with decreasing electron concentrationn in the δ-layer is related to the specific features of the screening processes in two-dimensional electron systems.
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