Abstract
Low temperature magnetoresistance measurements of vanadium oxide films have been performed. Both the resistance and magnetoresistance are well explained by weak electron localization and electron-electron interaction effects. The magnetoresistance due to weak electron localization is used to investigate inelastic and spin-orbit scattering times. Spin-orbit scattering time is independent of temperature. The temperature dependence of inelastic scattering time is compared with the theoretical values. In the temperature range 1.5 K≤T≤5 K, the inelastic scattering occurs due to only electron-electron interaction.
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