Abstract
We have studied the temperature dependence, in the range 150mK to 4K, of the conductivity and the phase coherence length in a two dimensional hole gas in a Si/Si 0.8Ge 0.2 strained layer heterostructure. The system is in the weak disorder regime, k Fl e≫1. We show that the dominant dephasing mechanism is due to carrier-carrier scattering involving small energy transfers. At zero magnetic field and low temperatures, the contribution from correlation effects in the quantum corrections to the conductivity is found to be negligible, due to the effectiveness of screening.
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