Abstract
AbstractFormation and characterization of a new hetero -structure of modulation doped p-Si0.5Ge0.5/Ge/Si1-xGex are comprehensively studied. In the MBE growth, thick Si1-xGex buffer layers are grown incommensurately at high temperature (520°C), and thin Si0.5Ge0.5/Ge layers are grown commensurately at low temperature (≦450°C). The strain field in the Ge channel layers can be precisely controlled by changing the Si composition (1-X) in the Si 1 -xGex buffer layers. As a result, a large energy discontinuity in the valence band (0.17 eV) is realized at the hetero -interface of p-Si0.5Ge0.5/Ge. This enables a high mobility of two -dimensional hole gas (4500 cm2/Vs) at 77 K.
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