Wavelet-XAFS investigation for Mn:Si diluted magnetic semiconductor thin films

Abstract

The Morlet wavelet transformation (MT) was used to analyze Mn K-edge extended X-ray absorption fine structure (EXAFS) spectra of Mn-doped Si-based diluted magnetic semiconductor (DMS) thin films grown by the magnetron co-sputtering method. MT of EXAFS data shows that the Mn–Mn scattering path can be distinguished by the Mn–Si scattering path in the spectra of Mn x Si1−x DMS thin films. In all DMS thin films Mn atoms fill Si sites without forming Mn–Si compounds while Mn–Si compounds are present in the annealed analogues. From the analysis of experimental data we point out that low-concentration Mn-doped samples are characterized by a more symmetric structure.