Wavelength scaling of silicon laser ablation in picosecond regime

Abstract

Single pulse laser ablation of silicon has been investigated at 343, 515, and 1030 nm using a laser pulse duration of 50 ps. In this large spectral range, ablation thresholds of silicon vary from 0.01 to 0.83 J/cm2, confirming a strong dependence on the wavelength. By solving the free-carrier density rate equation at threshold conditions, we show that band-to-band linear absorption dominates energy deposition at 343 and 515 nm, whereas at 1030 nm, the energy leading to ablation is primarily absorbed by the generated free-carriers. This allows us to determine the relevant criteria to derive a simple model predicting the wavelength dependence of the ablation threshold in this regime. We obtain an excellent agreement between experimental measurements and calculations by simply considering an averaged energy density required in the absorption depth for surface ablation and accounting for the laser-induced variations of the important thermophysical parameters. On the basis of this analysis, we discuss the optimal wavelength and fluence conditions for maximum removal rate, ablation efficiency, and accuracy. Despite the difference in mechanisms at the different wavelengths, we find that the maximal efficiency remains at around 7 times the ablation threshold fluence for all investigated wavelengths. This work provides guidelines for high-quality and efficient micromachining of silicon in the scarcely explored picosecond regime, while new picosecond sources offer numerous advantages for real throughput industrial applications.