Abstract
A wavelength dependent study of optical second harmonic generation in reflection from Si(111) is presented. Broadly tunable high power laser pulses with photon energies exceeding the indirect band gap of Si were used to probe the dispersion characteristics of the nonlinear response in the vicinity of bulk absorption. Changes in the second harmonic anisotropy have been attributed to the generation of an isotropic hot carrier plasma in the silicon surface. A phenomenological explanation of the observed changes is given based on a jellium model that is used to describe second harmonic generation from a free electron metal surface.
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