Abstract
AbstractSecond harmonic generation in reflection has been used to investigate the crystal properties of silicon carbide surfaces. By using a passively mode‐locked pulsed Nd3+: YAG laser the variation of the crystalline, polycrystalline and amorphous phase of silicon carbide at the surface has been investigated. The method is shown to be a sensitive and practical method to investigate the departure from perfect crystalline order at the surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
