Abstract
InGaN multi-quantum-well-structure laser diodes (LDs) with an emission wavelength of longer than 420 nm were grown on both an epitaxially laterally overgrown GaN (ELOG) substrate and an ELOG on a free-standing GaN substrate by a metaorganic chemical vapor deposition method. The wavelength dependence of InGaN LD characteristics was investigated. It was found that there was a strong relationship between the threshold current density and the emission wavelength of LDs. The LDs with the emission wavelength of 450 nm grown on the ELOG on a free-standing GaN substrate were demonstrated. The threshold current density and voltage of these LDs were 2.8 kA/cm2 and 4.5 V, respectively. The estimated lifetime was approximately 5000 h under 50°C continuous-wave operation at an output power of 5 mW.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
