Abstract
New types of Hamamatsu avalanche photodiodes (APD) have been investigated for the readout of PbWO 4 crystals. The results presented cover quantum efficiency measurements of APD prototype A-E, which is passivated by a SiO 2 layer or a Si 3N 4 layer, before and after exposure to a 5.5 Mrad dose of 60Co photons. The measurements of the gain and of the excess noise factor as a function of the wavelength are also presented and compared to analytic calculations based on a simple model for the internal APD structure. This work was performed within the frame of the CMS ECAL group.
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