Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal

Abstract

Multilayer-stacked linear InAs quantum dot (QD) arrays are created on InAs/InGaAsP superlattice templates formed by self-organized anisotropic strain engineering on InP (100) substrates in chemical beam epitaxy. Stacking of the QD arrays with identical emission wavelength in the 1.55 μm region at room temperature is achieved through the insertion of ultrathin GaAs interlayers beneath the QDs with increasing interlayer thickness in successive layers. The increment in the GaAs interlayer thickness compensates the QD size/wavelength increase during strain correlated stacking. This is the demonstration of a three-dimensionally self-ordered QD crystal with fully controlled structural and optical properties.