Abstract
In this work the optical waveguiding in semipolar InGaN-based laser diodes is analyzed. Different designs of the separate confinement heterostructure with AlGaN or GaN cladding layers and GaN or InGaN waveguide layers are studied. The influence of waveguide material, thickness and composition on the optical confinement factor Γ, the accumulated strain energy E and the refractive index contrast is calculated. Measurements of the threshold and the far field intensity distributions of lasers with differing waveguide design confirm the predictions from model calculations. The optimum waveguide for a 410 nm single quantum well laser is found to consist of a symmetric In0.04Ga0.96N waveguide of 2×85 nm thickness with GaN cladding layers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
