Abstract
As reported before in [1, 2] by us, waveguide based InAs/ GaSb superlattice photodetectors with gain quantum efficiency products G·η greater than unity in the Vis/ NIR even without bias had been realized. The reasons for the high gain coefficients and quantum efficiencies are examined here. The high gain quantum efficiency products are caused by photoconductive gain, partially due to phonon assisted transitions of carriers into the band continuum. Some other effects are excluded, for example the transferred electron effect. Furthermore, the spectral photoresponsivity has been altered by proper layer sequence design in order to achieve a photoresponsivity spectrum better adapted to the MIR.
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