Abstract
Development of high quantum efficiency photon detectors is needed for many low light level (LLL) applications. Recently a new type of photodetector was introduced, the so-called Silicon PhotoMultiplier (SiPM). Its good characteristics (fast response, high gain and single photon resolution capability) make SiPM suitable for many applications. Yet its quantum efficiency is still not satisfactory ( < 40 % ) for LLL applications. A new detector concept is presented that promises very high ( > 80 % ) quantum efficiency in a wide wavelength range (300–1000 nm). Combining the drift diode with an avalanche structure placed on the opposite side of the large-area radiation entrance window on the fully depleted bulk, one obtains a large-area device that focuses the photoelectron onto a small “point-like” avalanche region. Engineering of the shallow radiation entrance window provides high quantum efficiency in the desired wavelength range. Such a device can be used as a building block for a “silicon photomultiplier”. Extensive simulations have demonstrated the validity of this concept. A production of test devices for the optimization and characterization of avalanche regions and technology parameters has been carried out. The first results from this “proof of principle” production are presented.
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