Abstract
Water-soluble films for use as intermediate barrier material in three-layer resist systems are proposed. A water-soluble film containing MoO3, which is formed at a high rate, is found to be suitable for use as the bottom layer etch mask because of its high resistance to O2 RIE. By dipping the substrate in water after etching the bottom layer, the water-soluble film can be easily removed, without damaging the bottom layer or the substrate. The water-soluble film is successfully applied to a three-layer resist system for both e-beam and optical lithography.
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