Abstract
In this research work, Conductive bridge Random Access memory devices (CBRAMs) featuring a water-solution processed Polyethylene Oxide (PEO) layer used as solid polymer electrolyte were fabricated. The devices showed promising results with forming-free capabilities, switching voltages within the range from −1.5 V to 2.0 V, high OFF/ON resistance ratio ~ 105 and > 300 cycles each at 10 & 100 μA compliance current (CC). Cycling at various CC also confirmed that the conductive filament was more stable at higher compliance current with a higher probability to achieve non-volatile switching. This article also reports the conduction mechanism in the high and low resistance states for PEO based devices. Finally, due to their high OFF/ON current ratio, it is suggested that these devices could also serve as BEOL (Back-End-Of-Line) selector devices while operating in their volatile mode.
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