Abstract
We studied growth mechanisms of water-soluble NaCl thin films on single crystal substrates. Epitaxial growth of NaCl(100) on Si(100) and domain-matched growth of NaCl(111) on c-sapphire were obtained at thicknesses below 100 nm even at room temperature from low lattice mismatches in both cases. NaCl thin film, which demonstrates high solubility selectivity for water, was successfully applied as a water-soluble sacrificial layer for fabrication of several functional materials, such as WO3 nano-helix and Sn doped In2O3 nano-branches.
Highlights
We suggest a new method for fabrication of flexible devices using water-soluble inorganic thin films
Accumulated strain in NaCl film was relaxed at film thicknesses > 200 nm, and position of the (200) peak approached that of the bulk state (Fig. 3a and c)
We studied crystal structures of NaCl thin films prepared on Si(100) and c-sapphire substrates and applied film as a sacrificial layer in a new method developed for fabrication of flexible devices
Summary
We suggest a new method for fabrication of flexible devices using water-soluble inorganic thin films. After growing water-soluble thin film on general substrates, such as silicon and glass, high-temperature processing may be conducted without damaging the substrate because of high melting point of inorganic material[13]. We used NaCl (sodium chloride) as the water-soluble buffer layer for fabrication of the flexible device and analyzed its growth mechanism. Many functional materials requiring high-temperature processing may be used for fabrication of flexible devices by controlling orientation of the NaCl buffer layer. We examined growth mechanisms of NaCl films on Si(100) and c-plane sapphire substrates. We proposed mechanisms for epitaxial growth of NaCl films on Si(100) and c-sapphire substrates. We tested the effect of NaCl crystallinity on electrical properties of functional nano-materials (Sn doped In2O3 nano-branches: ITO NB) during transfer process
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