Abstract

The mechanism of thin silicide film growth on Nb and Ta surfaces depended on the substrate temperature. At room temperature the layer-by-layer growth of Si on Ta and Nb took place. The surface density of Si in one monolayer was 9.3.10/sup 14/ at/cm/sup 2/ on Ta and Nb. The onset of the penetration Si into Nb and Ta was observed at T>900 K. At this temperature the composition NbSi/sub 2/ and TaSi/sub 2/ were formed. At temperature T>1360 K for Ta and T>1270 K for Nb a structural phase transition occurred and silicide Ta/sub 4/Si and Nb/sub 4/Si was formed after reaching a certain critical concentration of Si in the subsurface region. Phase transition was followed by increase of the Si atoms diffusion from the surface into the bulk.

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