Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors

Abstract

We have fabricated fully patterned transparent oxide/organic hybrid transistors on glass substrates that contain In-Ga-Zn-O as the active layer and a poly(4-vinyl phenol-comethyl methacrylate) copolymer as the dielectric layer. These devices exhibit a saturation mobility of 6.04 cm2/V s, a threshold voltage value of 3.53 V, a subthreshold slope of 360 mV/decade, and an on-off ratio of 1.0×109 at a maximum processing temperature of 200 °C. We found that the bias stability characteristics of the hybrid transistors are dependent on the ambient conditions, but can also be dramatically improved by applying a hydrophobic organic passivation layer to the gate insulator.