Abstract
Wafer-scale fabrication of PtSe2 MOSFETs was demonstrated by photolithography on Pt films directly selenized at 400 °C. Taking advantage of the unique property of PtSe2 to transition from a semiconductor to a semimetal as its thickness increases beyond a few monolayers, channel recess was adapted for improving gate control while keeping the contact resistance below 0.01 $\Omega \cdot \text {cm}$ . The wafer-scale fabrication resulted in uniform device characteristics so that average instead of best results was reported. For example, the drain currents at ${V}_{\text {GS}} = -10$ V, ${V}_{\text {DS}} = -1$ V were $25~\pm ~5$ , 57 ± 8, and $618~\pm ~17~\mu \text{A}/\mu \text{m}$ for 4-, 8-, and 12-nm-thick PtSe2, respectively. The corresponding peak transconductances were 0.20 ± 0.1, 0.60 ± 0.05, and $1.4~\pm ~0.1~\mu \text{S}/\mu \text{m}$ . The forward-current cutoff frequency of 12-nm-thick PtSe2 MOSFETs was 42 ± 5 MHz, whereas the corresponding frequency of maximum oscillation was 180 ± 30 MHz. These results confirmed the application potential of PtSe2 for future-generation thin-film transistors.
Accepted Version
Published Version
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