Abstract
The possibility to perform wafer level probing measurement of thin films thermoelectric power is demonstrated by using test structures realized with dielectric cantilevers suspended over a silicon substrate and equipped with heavily n-doped polysilicon heaters and thermistors. The measurements presented are performed on p and n-doped polysilicon thin films without the need of any atmosphere conditioning, and, consequently, in a fully automatic fashion. An ad hoc extraction procedure is proposed in order to compensate for instrumental offsets and sensitivity limits typically existing in a standard wafer-level test instrumentation.
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