Wafer‐Scale PLD‐Grown High‐κ GCZO Dielectrics for 2D Electronics

Abstract

AbstractOxide dielectrics, such as HfO2, Al2O3, etc, are widely used to improve the performance of 2D semiconductors in electronic devices. However, future low‐power electronic devices need a higher dielectric constant (κ) to reduce the leakage current, and these super‐high‐κ materials are challenging to produce on wafer‐scale. Here, the preparation of wafer‐scale (Ga, Cu) co‐doping ZnO films is reported with super‐high dielectric constant (κ > 50) and good homogeneity by a pulsed laser deposition method. By regulating the (Ga, Cu) co‐doping concentration, the dielectric constants can range from 9 to 207. In addition, the performance of SnS2 field‐effect transistor reveals that the high‐κ Al2O3/GCZO gate dielectric stack is suitable for 2D electronic devices. This GCZO dielectric films not only show higher κ than other conventional dielectrics in terms of compatibility to CMOS processes, but also keep their comparative advantages in the fabrication of high‐performance electronic devices over conventional dielectrics.