Wafer‐Scale PLD‐Grown High‐κ GCZO Dielectrics for 2D Electronics (Adv. Electron. Mater. 12/2022)

Abstract

High-κ Gate Dielectrics In article number 2200580, Jing Yu, Wei Han, Francis Chi-Chung Ling, and co-workers prepare large-size (Ga, Cu) co-doped ZnO films with super-high dielectric constant (κ > 50) and good homogeneity by a pulsed laser deposition (PLD) method. The performance of SnS2 field-effect transistor reveals that high-κ Al2O3/GCZO gate dielectric stack is suitable for 2D electronic devices. The success in fabrication of GCZO films not only show higher κ than other conventional dielectrics in terms of compatibility to CMOS processes, but also keep their comparative advantages in the fabrication of high-performance electronic devices over conventional dielectrics.