Abstract
Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we demonstrate monolithic LN PICs fabricated on 4- and 6-inch wafers with deep ultraviolet lithography and show smooth and uniform etching, achieving 0.27 dB/cm optical propagation loss on wafer-scale. Our results show that LN PICs are fundamentally scalable and can be highly cost-effective.
Highlights
Thin-film lithium niobate (LN) photonic integrated circuits (PICs) have recently emerged as a promising photonics platform for many emerging applications due to their superior electro-optic performance and large second order optical nonlinearity
Wafer-scale fabrication would enable largescale and complex electro-optic and nonlinear optical PICs required for applications such as quantum photonics and integrated microwave photonics
This work (Fig. 1a,1b) has shown that metalization processes, as expected, are insensitive to the change on the optical waveguide layer. This enables the possibility of ultrahigh speed electro-optic devices characterized at wafer level in the near future, which is key to shortening the development cycle of LN PICs
Summary
Thin-film lithium niobate (LN) photonic integrated circuits (PICs) have recently emerged as a promising photonics platform for many emerging applications due to their superior electro-optic performance and large second order optical nonlinearity. This is achieved through the recent development of high-confinement waveguides with low propagation loss [1,2,3,4,5,6], comparable to that of passive material platforms. The resulting sidewall roughness increases scattering losses, which limits optical propagation loss in photoresist masked LN devices
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