Abstract
The hybridization of silicon (Si) thin film and lithium niobate (LN) thin film with remarkable properties, including the excellent optical properties of LN, excellent electrical properties and mature processing advantages of Si, can provide an important material platform for integrated photonic applications. In this work, a 4-inch single crystalline Si thin film wafer was prepared using wafer bonding, grinding and polishing techniques on LN thin film substrate. The films were characterized by using high-resolution transmission electron microscopy (HRTEM). The interplanar spacings and strain of Si film were calculated by analysis of high-resolution X-ray diffraction (HRXRD). Si ridge straight waveguides were fabricated on the hybrid thin films, and the transmission loss was 1.2 dB/cm. The near-field mode distribution of the waveguide was investigated by combining FDTD (Finite-Difference Time-Domain) simulation and end coupling measurement.
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