Wafer level reliability and lifetime analysis of InGaAsP/InP quantum-well Fabry-Perot laser diode

Abstract

This paper investigated the reliability of semiconductor 1.3-/spl mu/m multiquantum-well (MQW) Fabry-Perot laser diodes (LDs) in a quarter 2-in wafer level that are measured to have uniform threshold currents, slope efficiencies, and wavelengths within 4% of the maximum deviation. By performing the accelerated aging test under a constant optical power of 3 mW at 85/spl deg/C for 2100 h, the lifetime of the fabricated optoelectronic devices was estimated, where the failure rate was matched on the fitted line of the lognormal distribution model resulting in the mean-time-to-failure (MTTF) of 2/spl times/10/sup 6/ h operating at room temperature.