Abstract
A wafer level bonding technique by localized induction heating has been developed and demonstrated in this paper. A suitable fabrication process scheme has also been established for the localized induction heating and bonding. It takes only about 20 seconds to complete the bonding process. The temperatures of solder loops and the central area of solder loops are above 300°C and below 70°C, respectively. Due to the solder reflow, robust and hermetic glass wafer bonding is accomplished, and the average tensile strength is 6.42 MPa. Under-heated or over-heated bonding has been found to result in cracks at bonding interfaces and sputtering layer, which degrades the bonding qualities.
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