Abstract
The 1300 nm range vertical-cavity surface-emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular-beam epitaxy and the double wafer-fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown single-mode CW operation with the output optical power of ∼6 mW at 20°C. Opened eye diagrams are observed up to 10 Gbps.
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