Superlattice based 1300-nm Wafer fused VCSELs fully grown by MBE

V.V Andryushkin,V.M Ustinov,S.S Rochas,A.G Gladyshev,A.A Blokhin,L.Ya Karachinsky,A.V Babichev,S.A Blokhin,I.I Novikov,A.Yu Egorov,I.O Zhumaeva,K.O Voropaev,M.A Bobrov,N.A Maleev

doi:10.1109/iclo54117.2022.9840255

Superlattice based 1300-nm Wafer fused VCSELs fully grown by MBE

V.V Andryushkin, V.M Ustinov + Show 12 more

https://doi.org/10.1109/iclo54117.2022.9840255

Copy DOI

Publication Date: Jun 20, 2022

Affiliation: ITMO University, Submicron Heterostructures for Microelectronics Research and Engineering Center, Ioffe Institute, Yaroslav-the-Wise Novgorod State University

#Vertical-cavity Surface-emitting Lasers #Open Eye Diagrams + Show 8 more

Abstract
Full-Text
Similar Papers

Abstract

1300-nm vertical-cavity surface-emitting lasers (VCSELs) based on InGaAs/InGaAlAs superlattice active region and GaAs/AlGaAs distributed Bragg reflectors grown both by molecular-beam epitaxy are studied. Monolithic VCSEL wafer was realized by wafer-fusion technique Single-mode operation at power of 6 mW and open eye diagrams at rate about 10 Gbps were demonstrated.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Similar Papers

Paper Title

Journal

Date

Author

View more papers

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.