Abstract
This paper describes a characterization of tungsten Chemical Mechanical Polishing (CMP) for W plugs interconnection. Different CMP consumables (pads and slurries) have been compared in terms of CMP process performance, plugs and lines morphology, and electrical results. The best CMP process performance (W removal rate: 5500 Å min −1, non uniformity: 7%, low plug recess) was obtained using a hard pad (RODEL IC 1000 on SUBA IV) coupled with a ferric nitrate based slurry. This W CMP process was integrated in a 0.25 μm interconnects scheme. Kelvin resistance and vias chain yield appeared to be equivalent to the referenced W RIE etch back process. A new simple and very reproducible method for end-point detection has also been investigated. It is based on pad temperature measurement.
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