W‐Clad Layer Formation on Heavily Doped p + ‐ Si by Selective Chemical Vapor Deposition

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The fabrication process of a W‐clad layer on by using chemical vapor deposition is described. X‐ray photo‐electron spectroscopy and secondary ion mass spectroscopy are used to show that interfacial fluorine causes high contact resistance and weak adhesion of W to the . A three‐step process is shown to reduce the interfacial fluorine, thereby obtaining low contact resistance: Si reduction of reduction of , and in situ annealing at 550°C. This fabrication process gives a low contact resistivity of on a heavily doped . This technique was used to form a W‐clad layer on the active layer of a p‐metal oxide semiconductor field effect transistor on a separation by implanted oxygen substrate.