W-Band 광대역 저잡음 증폭기 설계

Abstract

This paper presents a W-band broadband low noise amplifier (LNA). The proposed LNA was designed and verified using a 100 nm GaAs pHEMT. To achieve broadband low noise and gain characteristics, peak gain distribution was employed. The LNA comprised four gain stages and a shunt inductor at the input stage to prevent the device damage. The LNA achieved a 16.2 dB gain and 5.5 dB noise figure in an area of 1.78×0.743 mm2