Design of a LNA and a Gilbert cell mixer MMICs with a GaAs PHEMT technology

E Martins,E.M Bastida,M.V.G Gomes,J.W Swart

doi:10.1109/imoc.1999.867106

Design of a LNA and a Gilbert cell mixer MMICs with a GaAs PHEMT technology

E Martins, E.M Bastida + Show 2 more

https://doi.org/10.1109/imoc.1999.867106

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Publication Date: Jan 1, 1999

Citations: 8

Affiliation: Universidade Estadual Paulista (Unesp), Centre for Research and Development in Telecommunications (Brazil), Universidade Estadual de Campinas

#dB Noise Figure #GaAs PHEMT Technology + Show 8 more

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Abstract

The design of a Gilbert cell mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both blocks on the same chip, to form a high performance 1.9 GHz receiver front-end. The designed LNA shows 9.23 dB gain and 2.01 dB noise figure (NF). The mixer is designed to operate at RF=1.9 GHz LO=2.0 GHz and IF=100 MHz with a gain of 14.3 dB and single sideband noise figure (SSB NF) of 9.6 dB. The mixer presents a bandwith of 8 GHz.

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