Abstract

The lattice defect creation stimulated by exciton self-trapping into molecular type states (M-STE) in solid Xe is studied by a luminescence VUV spectroscopy method. A model of the “excited state” mechanism of lattice defect creation is developed. The main model parameters — the time of stable defect creation and the activation energy needed — are estimated. The feature associated with the desorbing dimers or/and dimers on the sample surface is found.

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