Abstract
Electronic excitation is shown to affect the structural properties of the Xe matrix at low temperatures. The lattice defect creation was studied using the selective vacuum ultraviolet (VUV) spectroscopy methods. The samples were excited by synchrotron radiation in the range of excitonic absorption. The temporal evolution of the intensity distribution in the band of molecular type self-trapped exciton luminescence was analyzed. A direct evidence for the creation and accumulation of point lattice defects in solid Xe via the excitonic mechanism was obtained for the first time. The model of permanent lattice defect creation and transformation is discussed.
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