Abstract
PIN and avalanche photodiodes are vital component parts of today's optical communication systems. For these, InP/InGaAs/InP heteroepitaxial structures are required. To improved the quality and yield of these devices, the epitaxial wafers must be of very high purity and uniformity. At Sumitomo Electric we have grown the above mentioned epitaxial layers by the chloride VPE method, which is safe and has a usefully high growth rate. This article describes the growth technique and the characterization of high uniformity and high purity InGaAs/InP epilayers.
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